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HUF76419D3S Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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HUF76419D3S Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2001 Fairchild Semiconductor Corporation HUF76419D3, HUF76419D3S Rev. B Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 60 - - V ID = 250µA, VGS = 0V , TC = -40 oC (Figure 12) 55 - - V Zero Gate Voltage Drain Current IDSS VDS = 55V, VGS = 0V - - 1 µA VDS = 50V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 20A, VGS = 10V (Figures 9, 10) - 0.031 0.037 Ω ID = 20A, VGS = 5V (Figure 9) - 0.036 0.043 Ω ID = 19A, VGS = 4.5V (Figure 9) - 0.038 0.046 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-251,TO-252 - - 2.00 oC/W Thermal Resistance Junction to Ambient RθJA - - 100 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 30V, ID = 19A VGS = 4.5V, RGS = 13Ω (Figures 15, 21, 22) - - 205 ns Turn-On Delay Time td(ON) -12- ns Rise Time tr - 124 - ns Turn-Off Delay Time td(OFF) -28- ns Fall Time tf -50- ns Turn-Off Time tOFF - - 115 ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 30V, ID = 20A VGS = 10V, RGS = 13Ω (Figures 16, 21, 22) - - 62 ns Turn-On Delay Time td(ON) -6.5 - ns Rise Time tr -35- ns Turn-Off Delay Time td(OFF) -50- ns Fall Time tf - 50 - ns Turn-Off Time tOFF - - 150 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 30V, ID = 20A, Ig(REF) = 1.0mA (Figures 14, 19, 20) - 23 27.5 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 12.5 15 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 0.9 1.05 nC Gate to Source Gate Charge Qgs -2.7 - nC Gate to Drain “Miller” Charge Qgd -5.9 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) - 900 - pF Output Capacitance COSS - 250 - pF Reverse Transfer Capacitance CRSS -45- pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 20A - - 1.25 V ISD = 10A - - 1.0 V Reverse Recovery Time trr ISD = 20A, dISD/dt = 100A/µs- - 74 ns Reverse Recovered Charge QRR ISD = 20A, dISD/dt = 100A/µs - - 200 nC HUF76419D3, HUF76419D3S |
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