© 1998 Fairchild Semiconductor Corporation

www.fairchildsemi.com

PN2907A / MMBT2907A / PZT2907A Rev. 1.1.1

2

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Notes:

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

These ratings are based on a maximum junction temperature of 150

°C.

These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed

or low duty-cycle operations.

2. All voltages (V) and currents (A) are negative polarity for PNP Transistors.

Note:

Symbol

Parameter

Ratings

Units

Collector-Emitter Voltage

-60

V

Collector-Base Voltage

-60

V

Emitter-Base Voltage

-5.0

V

Collector Current-Continuous

-800

mA

-55 to + 150

°C

Symbol

Parameter

Max.

Units

PN2897A

MMBT2907A

PZT2907A

Total Device Dissipation

625

350

1000

mW

Derate above 25

°C5.0

2.8

8.0

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

357

125

°C/W