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PZT2907A Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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PZT2907A Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com PN2907A / MMBT2907A / PZT2907A Rev. 1.1.1 2 Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Notes: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. These ratings are based on a maximum junction temperature of 150 °C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low duty-cycle operations. 2. All voltages (V) and currents (A) are negative polarity for PNP Transistors. Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Note: 3. PCB size FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage -60 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -800 mA TJ, TSTG(2) Operating and Storage Junction Temperature Range -55 to + 150 °C Symbol Parameter Max. Units PN2897A MMBT2907A PZT2907A PD Total Device Dissipation 625 350 1000 mW Derate above 25 °C5.0 2.8 8.0 mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W |
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Similar Description - PZT2907A |
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