©2001 Fairchild Semiconductor Corporation

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

Handling Precautions for IGBT’s

Insulated Gate Bipolar Transistors are susceptible to gate-

insulation damage by the electrostatic discharge of energy

through the devices. When handling these devices, care

should be exercised to assure that the static charge built in

the handler’s body capacitance is not discharged through the

device. With proper handling and application procedures,

however, IGBT’s are currently being extensively used in pro-

duction by numerous equipment manufacturers in military,

industrial and consumer applications, with virtually no dam-

age problems due to electrostatic discharge. IGBT’s can be

handled safely if the following basic precautions are taken:

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as †“ECCOSORBD LD26” or equivalent.

2. When devices are removed by hand from their carriers,

the hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from

circuits with power on.

† Trademark Emerson and Cumming, Inc

.

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073

4,417,385

4,430,792

4,443,931

4,466,176

4,516,143

4,532,534

4,567,641

4,587,713

4,598,461

4,605,948

4,618,872

4,620,211

4,631,564

4,639,754

4,639,762

4,641,162

4,644,637

4,682,195

4,684,413

4,694,313

4,717,679

4,743,952

4,783,690

4,794,432

4,801,986

4,803,533

4,809,045

4,809,047

4,810,665

4,823,176

4,837,606

4,860,080

4,883,767

4,888,627

4,890,143

4,901,127

4,904,609

4,933,740

4,963,951

4,969,027