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A3PE3000-1PQG208YI Datasheet(PDF) 8 Page - Microsemi Corporation |
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A3PE3000-1PQG208YI Datasheet(HTML) 8 Page - Microsemi Corporation |
8 / 162 page ProASIC3E Device Family Overview 1-2 Revision 13 Single Chip Flash-based FPGAs store their configuration information in on-chip flash cells. Once programmed, the configuration data is an inherent part of the FPGA structure, and no external configuration data needs to be loaded at system power-up (unlike SRAM-based FPGAs). Therefore, flash-based ProASIC3E FPGAs do not require system configuration components such as EEPROMs or microcontrollers to load device configuration data. This reduces bill-of-materials costs and PCB area, and increases security and system reliability. Instant On Flash-based ProASIC3E devices support Level 0 of the Instant On classification standard. This feature helps in system component initialization, execution of critical tasks before the processor wakes up, setup and configuration of memory blocks, clock generation, and bus activity management. The Instant On feature of flash-based ProASIC3E devices greatly simplifies total system design and reduces total system cost, often eliminating the need for CPLDs and clock generation PLLs that are used for these purposes in a system. In addition, glitches and brownouts in system power will not corrupt the ProASIC3E device's flash configuration, and unlike SRAM-based FPGAs, the device will not have to be reloaded when system power is restored. This enables the reduction or complete removal of the configuration PROM, expensive voltage monitor, brownout detection, and clock generator devices from the PCB design. Flash-based ProASIC3E devices simplify total system design and reduce cost and design risk while increasing system reliability and improving system initialization time. Firm Errors Firm errors occur most commonly when high-energy neutrons, generated in the upper atmosphere, strike a configuration cell of an SRAM FPGA. The energy of the collision can change the state of the configuration cell and thus change the logic, routing, or I/O behavior in an unpredictable way. These errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a complete system failure. Firm errors do not exist in the configuration memory of ProASIC3E flash-based FPGAs. Once it is programmed, the flash cell configuration element of ProASIC3E FPGAs cannot be altered by high-energy neutrons and is therefore immune to them. Recoverable (or soft) errors occur in the user data SRAM of all FPGA devices. These can easily be mitigated by using error detection and correction (EDAC) circuitry built into the FPGA fabric. Low Power Flash-based ProASIC3E devices exhibit power characteristics similar to an ASIC, making them an ideal choice for power-sensitive applications. ProASIC3E devices have only a very limited power-on current surge and no high-current transition period, both of which occur on many FPGAs. ProASIC3E devices also have low dynamic power consumption to further maximize power savings. Advanced Flash Technology The ProASIC3E family offers many benefits, including nonvolatility and reprogrammability through an advanced flash-based, 130-nm LVCMOS process with seven layers of metal. Standard CMOS design techniques are used to implement logic and control functions. The combination of fine granularity, enhanced flexible routing resources, and abundant flash switches allows for very high logic utilization without compromising device routability or performance. Logic functions within the device are interconnected through a four-level routing hierarchy. |
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