2

TN2640

Thermal Characteristics

Package

I

D

(continuous

(mA)

I

D

(pulsed)

(A)

Power Dissipation

@T

O

C

(W)

θ

jc

θ

ja

I

DR

†

(mA)

I

DRM

(A)

TO-252 (D-PAK)

500

3.0

6.25

50

500

3.0

8-Lead SOIC

260

2.0

24

260

2.0

TO-92

220

2.0

0.74

125

170

220

2.0

Notes:

†

I

‡

Mounted on FR4 board, 25mm x 25mm x 1.57mm

Sym

Parameter

Min

Typ

Max

Units

Conditions

BV

DSS

Drain-to-source breakdown voltage

400

-

-

V

V

V

GS(th)

Gate threshold voltage

0.8

-

2.0

V

V

ΔV

GS(th)

Change in V

-

-2.5

-4.0

I

GSS

Gate body leakage

-

100

nA

V

I

DSS

Zero gate voltage drain current

-

-

10

µA

V

-

-

1.0

mA

V

V

O

C

I

D(ON)

On-state drain current

1.5

3.5

-

A

V

2.0

4.0

-

V

R

DS(ON)

Static drain-to-source

on-state resistance

-

3.2

5.0

Ω

V

-

3.0

5.0

V

ΔR

DS(ON)

Change in R

-

-

0.75

V

G

FS

Forward transconductance

200

330

-

mmho V

C

ISS

Input capacitance

-

210

225

pF

V

V

f = 1.0MHz

C

OSS

Common source output capacitance

-

30

50

C

RSS

Reverse transfer capacitance

-

8.0

15

8-Lead SOIC (LG)

Product Marking

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

SiTN

2 6 4 0

Y Y W W

TO-252 (D-PAK) (K4)

TO-92 (N3)

YY = Year Sealed

WW = Week Sealed

L = Lot Number

= “Green” Packaging

Si YYWW

TN2640

LLLLLLL

YY = Year Sealed

WW = Week Sealed

L = Lot Number

= “Green” Packaging

YYWW

N2640

L L L L

Package may or may not include the following marks: Si or

Package may or may not include the following marks: Si or

Package may or may not include the following marks: Si or