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BZV49-C10 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BZV49-C10 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 10 page 2005 Feb 03 3 NXP Semiconductors Product data sheet Voltage regulator diodes BZV49 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. ELECTRICAL CHARACTERISTICS Total series Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 250 mA IZSM non-repetitive peak reverse current tp = 100 μs; square wave; Tj = 25 °C prior to surge see Table “Per type” Ptot total power dissipation Tamb = 25 °C; note 1 − 1 W PZSM non-repetitive peak reverse power dissipation tp = 100 μs; square wave; Tj = 25 °C prior to surge; see Fig.2 − 40 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 50 mA; see Fig.3 1 V |
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