FMMT722TA datasheet(3/4 Pages) DIODES

Part #	FMMT722TA

Description	SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS

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Manufacturer	DIODES [Diodes Incorporated]

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-55°C

100°C

25°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Collector Current

I+/I*=10

Collector Current

25°C

100°C

-55°C

25°C

100°C

-55°C

I+/I*=30

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V+-=2V

0

450

225

25°C

100°C

-55°C

V+-=2V

0.2

0.0

1.0

0.8

0.6

0.4

D.C.

1s

100ms

10ms

1ms

100µs

10

1.0

0.1

0.01

VCE(VOLTS)

Safe Operating Area

TYPICAL CHARACTERISTICS

0.1

10A

1mA

10A

1mA

10A

1mA

10A

1mA

1.2

1.4

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.4

100m

1

10m

1m

10m

100m

1

10

IC - Collector Current (A)

VCE(SAT) v IC

I+/I*=10

I+/I*=30

I+/I*=50

+25°C

10mA

100mA

1A

VCE(SAT) vs IC

VBE(SAT) vs IC

10mA

100mA

1A

10mA

100mA

1A

hFE vs IC

VBE(ON) vs IC

10mA

100mA

1A

1.0

10

100

SINGLE PULSE TEST Tamb = 25 deg C

FMMT718

0.0

0.2

0.4

0.6

0.8

1.0

Collector Current

I+/I*=5

Collector Current

10A

Collector Current

10A

Collector Current

10A

Collector Current

10A

I+/I*=10

I+/I*=20

I+/I*=50

25°C

I+/I*=10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V+-=5V

450

225

V+-=5V

0.2

0.0

1.0

0.8

0.6

0.4

10

1.0

0.1

0.01

SINGLE PULSE TEST Tamb = 25 deg C

VCE (VOLTS)

TYPICAL CHARACTERISTICS

-55°C

100°C

25°C

100°C

-55°C

25°C

100°C

-55°C

25°C

100°C

-55°C

D.C.

1s

100ms

10ms

1ms

1mA

0.1

1mA

10A

1mA

0.0

0.1

0.2

0.3

0.4

0.5

0.0

Safe Operating Area

I+/I*=5

0.6

0.5

0.4

0.3

0.2

0.1

1.4

1.6

1.2

10mA

1A

100mA

VBE(SAT) vs IC

10mA

100mA

1A

VCE(SAT) vs IC

10mA

100mA

1A

VBE(SAT) vs IC

10mA

1A

100mA

hFE vs IC

VBE(ON) vs IC

10mA

100mA

1A

100µs

1

10

100

FMMT722

3 - 166

3 - 163

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