Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

MCR12DSN-1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # MCR12DSN-1G
Description  Sensitive Gate Silicon Controlled Rectifiers
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MCR12DSN-1G Datasheet(HTML) 2 Page - ON Semiconductor

  MCR12DSN-1G Datasheet HTML 1Page - ON Semiconductor MCR12DSN-1G Datasheet HTML 2Page - ON Semiconductor MCR12DSN-1G Datasheet HTML 3Page - ON Semiconductor MCR12DSN-1G Datasheet HTML 4Page - ON Semiconductor MCR12DSN-1G Datasheet HTML 5Page - ON Semiconductor MCR12DSN-1G Datasheet HTML 6Page - ON Semiconductor MCR12DSN-1G Datasheet HTML 7Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
MCR12DSM, MCR12DSN
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,− Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Thermal Resistance − Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
2.2
88
80
°C/W
Maximum Lead Temperature for Soldering Purposes (Note 3)
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 4)
(VAK = Rated VDRM or VRRM; RGK = 1.0 KW)TJ = 25°C
TJ = 110°C
IDRM,
IRRM
10
500
mA
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage, (IGR = 10 mA)
VGRM
10
12.5
18
V
Peak Reverse Gate Blocking Current, (VGR = 10 V)
IGRM
1.2
mA
Peak Forward On−State Voltage (Note 5), (ITM = 20 A)
VTM
1.3
1.9
V
Gate Trigger Current (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 W)TJ = 25°C
TJ = −40°C
IGT
5.0
12
200
300
mA
Gate Trigger Voltage (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 W)TJ = 25°C
TJ = −40°C
TJ = 110°C
VGT
0.45
0.2
0.65
1.0
1.5
V
Holding Current
(VD = 12 V, Initiating Current = 200 mA, RGK = 1 kW)TJ = 25°C
TJ = −40°C
IH
0.5
1.0
6.0
10
mA
Latching Current
(VD = 12 V, IG = 2.0 mA, RGK = 1 kW)TJ = 25°C
TJ = −40°C
IL
0.5
1.0
6.0
10
mA
Turn−On Time
(Source Voltage = 12 V, RS = 6.0 KW, IT = 16 A(pk), RGK = 1.0 KW)
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 ms)
tgt
2.0
5.0
ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform, RGK = 1.0 KW, TJ = 110°C)
dv/dt
2.0
10
V/ms
Critical Rate of Rise of On−State Current
(IPK = 50 A, PW = 40 msec, diG/dt = 1 A/msec, IGT = 10 mA)
di/dt
50
100
A/ms
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Ratings apply for negative gate voltage or RGK = 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
5. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
6. RGK current not included in measurement.


Similar Part No. - MCR12DSN-1G

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
MCR12DSN-001 ONSEMI-MCR12DSN-001 Datasheet
73Kb / 7P
   Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
November, 2005 ??Rev. 4
logo
Kersemi Electronic Co.,...
MCR12DSN-001 KERSEMI-MCR12DSN-001 Datasheet
436Kb / 7P
   Silicon Controlled Rectifiers
logo
ON Semiconductor
MCR12DSN-001G ONSEMI-MCR12DSN-001G Datasheet
73Kb / 7P
   Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
November, 2005 ??Rev. 4
More results

Similar Description - MCR12DSN-1G

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
2N5061RLR ONSEMI-2N5061RLR Datasheet
70Kb / 8P
   Sensitive Gate Silicon Controlled Rectifiers
January, 2005 ??Rev. 7
C106 ONSEMI-C106 Datasheet
62Kb / 6P
   Sensitive Gate Silicon Controlled Rectifiers
August, 2005 ??Rev. 8
logo
SemiWell Semiconductor
MCK100-8 SEMIWELL-MCK100-8 Datasheet
568Kb / 5P
   Sensitive Gate Silicon Controlled Rectifiers
MCR22-8 SEMIWELL-MCR22-8 Datasheet
569Kb / 5P
   Sensitive Gate Silicon Controlled Rectifiers
SCN2C60 SEMIWELL-SCN2C60 Datasheet
623Kb / 5P
   Sensitive Gate Silicon Controlled Rectifiers
logo
YENYO TECHNOLOGY Co., L...
MCR100 YENYO-MCR100 Datasheet
150Kb / 4P
   Sensitive Gate / Silicon Controlled Rectifiers
MCR100-8A YENYO-MCR100-8A Datasheet
150Kb / 4P
   Sensitive Gate / Silicon Controlled Rectifiers
logo
Shenzhen Winsemi Microe...
WCD6C60S WINSEMI-WCD6C60S Datasheet
408Kb / 5P
   Sensitive Gate Silicon Controlled Rectifiers
logo
Apollo Electron Co., Lt...
CD6C60S APOLLOELECTRON-CD6C60S Datasheet
594Kb / 5P
   Sensitive Gate Silicon Controlled Rectifiers
logo
ON Semiconductor
NYC008-6JG-D ONSEMI-NYC008-6JG-D Datasheet
147Kb / 7P
   Sensitive Gate Silicon Controlled Rectifiers
January, 2010 ??Rev. 0
More results


Html Pages

1 2 3 4 5 6 7


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com