©2001 Fairchild Semiconductor Corporation

HUF75344G3, HUF75344P3, HUF75344S3S Rev. B1

HUF75344G3, HUF75344P3, HUF75344S3S

75A, 55V, 0.008 Ohm, N-Channel UltraFET

Power MOSFETs

These N-Channel power MOSFETs

are manufactured using the

advanced process technology

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

Formerly developmental type TA75344.

Features

• 75A, 55V

• Simulation Models

Models

- Thermal Impedance PSPICE and SABER Models

Available on the web at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF75344G3

TO-247

75344G

HUF75344P3

TO-220AB

75344P

HUF75344S3S

TO-263AB

75344S

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUF75344S3ST.

D

G

S

JEDEC STYLE TO-247

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

(TAB)

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

Data Sheet

December 2001