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NCP706MX22TAG Datasheet(PDF) 4 Page - ON Semiconductor

Part # NCP706MX22TAG
Description  1A, 1% Precision Very Low Dropout Voltage Regulator with Enable
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP706MX22TAG Datasheet(HTML) 4 Page - ON Semiconductor

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NCP706
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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 2.1 V
−40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.3 V or 2.4 V, whichever is greater; IOUT = 10 mA, CIN = COUT = 4.7 mF, VEN = 0.9 V, unless
otherwise noted. Typical values are at TJ = +25°C. (Note 3)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Operating Input Voltage
VIN
2.4
5.5
V
Undervoltage lock−out
VIN rising
UVLO
1.2
1.6
1.9
V
Output Voltage Accuracy
VOUT + 0.3 V ≤ VIN ≤ 4.5 V, IOUT = 0 – 1 A
VOUT
2.079
2.10
2.121
V
Line Regulation
VOUT + 0.3 V ≤ VIN ≤ 4.5 V, IOUT = 10 mA
RegLINE
2
mV
Load Regulation
IOUT = 0 mA to 1 A
RegLOAD
2
mV
Load Transient
IOUT = 10 mA to 1A or 10 mA to 1 A in 10 ms,
COUT = 10 mF
TranLOAD
±120
mV
Dropout voltage (Note 4)
IOUT = 1 A, VOUT(nom) = 2.1 V
VDO
300
mV
Output Current Limit
VOUT = 90% VOUT(nom)
ICL
1.1
A
Quiescent current
IOUT = 0 mA
IQ
180
230
mA
Ground current
IOUT = 1 A
IGND
200
mA
Shutdown current
VEN ≤ 0 V, VIN = 2.0 to 5.5 V
0.1
1
mA
Reverse Leakage Current
in Shutdown
VIN = 5.5 V, VOUT = VOUT(NOM),
VEN < 0.4 V
IREV
1.5
5
mA
EN Pin High Threshold
EN Pin Low Threshold
VEN Voltage increasing
VEN Voltage decreasing
VEN_HI
VEN_LO
0.9
0.4
V
V
EN Pin Input Current
VEN = 5.5 V
IEN
100
500
nA
Turn−on Time
COUT = 4.7 mF,
from assertion EN pin to 98% Vout(nom)
tON
200
ms
Power Supply Rejection Ratio
VIN = 2.6 V,
VOUT = 2.1 V
IOUT = 0.5 A
f = 100 Hz
f = 1 kHz
f = 10 kHz
PSRR
60
60
40
dB
Output Noise Voltage
VOUT = 2.1 V, VIN = 2.6 V, IOUT = 0.5 A
f = 100 Hz to 100 kHz
VNOISE
280
mVrms
Thermal Shutdown Temperature
Temperature increasing from TJ = +25°C
TSD
160
°C
Thermal Shutdown Hysteresis
Temperature falling from TSD
TSDH
20
°C
3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at
TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
4. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.3 V.


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