2SD1163A datasheet(2/2 Pages) THINKISEMI

Part #	2SD1163A

Description	NPN Silicon Epitaxial Power Transistor

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Manufacturer	THINKISEMI [Thinki Semiconductor Co., Ltd.]

Direct Link	http://www.thinkisemi.com

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CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

2SD1163

120

V(BR)CEO

Collector-emitter

breakdown voltage

2SD1163A

IC=10mA ;RBE=∞

150

V

V(BR)EBO

Emitter-base breakdown voltage

IE=10mA ;IC=0

6

V

2SD1163

2.0

VCEsat

Collector-emitter

saturation voltage

2SD1163A

IC=5A, IB=0.5A

1.0

V

VBEsat

Base-emitter saturation voltage

IC=5A, IB=0.5A

1.2

V

2SD1163

VCB=300V;IE=0

5

mA

ICBO

Collector

cut-offcurrent

2SD1163A

VCB=350V;IE=0

5

mA

hFE

DC current gain

IC=5A ; VCE=5V

25

Switching times

tf

Fall time

ICM=3.5A;IB1 =0.45A

0.5

μs

®

2SD1163/2SD1163A

http://www.thinkisemi.com/

Page 2/2

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