 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
HUF75623S3ST Datasheet(PDF) 2 Page - Fairchild Semiconductor |
|
||||||||||||||||||||||||||||||
HUF75623S3ST Datasheet(HTML) 2 Page - Fairchild Semiconductor |
|
|
2 / 10 page  ©2001 Fairchild Semiconductor Corporation HUF75623P3, HUF75623S3ST Rev. B Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 11) 100 - - V Zero Gate Voltage Drain Current IDSS VDS = 95V, VGS = 0V - - 1 µA VDS = 90V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V Drain to Source On Resistance rDS(ON) ID = 22A, VGS = 10V (Figure 9) - 0.054 0.064 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-220 - - 1.76 oC/W Thermal Resistance Junction to Ambient RθJA -- 62 oC/W SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 50V, ID = 22A VGS = 10V, RGS = 13Ω (Figures 18, 19) - - 75 ns Turn-On Delay Time td(ON) -7.9 - ns Rise Time tr -42- ns Turn-Off Delay Time td(OFF) -47- ns Fall Time tf - 39 - ns Turn-Off Time tOFF - - 130 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 50V, ID = 22A, Ig(REF) = 1.0mA (Figures 13, 16, 17) -43 52 nC Gate Charge at 10V Qg(10) VGS = 0V to 10V - 23 28 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - 1.7 2 nC Gate to Source Gate Charge Qgs -3.5 - nC Gate to Drain “Miller” Charge Qgd -8.7 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) - 790 - pF Output Capacitance COSS - 215 - pF Reverse Transfer Capacitance CRSS -70- pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 22A - - 1.25 V ISD = 11A - - 1.00 V Reverse Recovery Time trr ISD = 22A, dISD/dt = 100A/µs - - 100 ns Reverse Recovered Charge QRR ISD = 22A, dISD/dt = 100A/µs - - 313 nC HUF75623P3, HUF75623S3ST |
Similar Part No. - HUF75623S3ST |
|
Similar Description - HUF75623S3ST |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
