IS61C1024AL-12JLI datasheet(3/15 Pages) ISSI

Part #	IS61C1024AL-12JLI

Description	128K x 8 HIGH-SPEED CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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3 / 15 page

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

3

Rev. D

05/09/2012

IS61C1024AL, IS64C1024AL

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

Vterm

TerminalVoltagewithRespecttoGND

–0.5to+7.0

V

tstg

StorageTemperature

–65to+150

°C

Pt

PowerDissipation

1.5

W

Iout

DCOutputCurrent(LOW)

20

mA

Notes:

1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause

permanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperation

ofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperational

sectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingcon-

ditionsforextendedperiodsmayaffectreliability.

CAPACITANCE(1,2)

Symbol

Parameter

Conditions

Max.

Unit

cIn

InputCapacitance

VIn = 0V

5

pF

cout

OutputCapacitance

Vout = 0V

7

pF

Notes:

1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.

2. Testconditions:Ta = 25°c, f=1MHz,VDD=5.0V.

DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

Voh

OutputHIGHVoltage

VDD = Min.,Ioh = –4.0mA

2.4

—

V

Vol

OutputLOWVoltage

VDD = Min.,Iol = 8.0mA

—

0.4

V

VIh

InputHIGHVoltage

2.2

VDD + 0.5

V

VIl

InputLOWVoltage(1)

–0.3

0.8

V

IlI

InputLeakage

GND

≤VIn ≤ VDD

Com.

–1

1

µA

Ind.

–2

2

Auto.

–5

5

Ilo

OutputLeakage

GND

≤Vout ≤ VDD

Com.

–1

1

µA

OutputsDisabled

Ind.

–2

2

Auto.

–5

5

Note:

1.VIl = –3.0Vforpulsewidthlessthan10ns.

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