IS61WV5128EDBLL-10BI datasheet(5/14 Pages) ISSI

Part #	IS61WV5128EDBLL-10BI

Description	512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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Integrated Silicon Solution, Inc. — www.issi.com

5

Rev. B

11/08/2011

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IS61/64WV5128EDBLL

READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)

-8

-10

-20

Symbol

Parameter

Min. Max.

Unit

trC

ReadCycleTime

8—

10—

20—

ns

taa

AddressAccessTime

—8

—10

—20

ns

tOha

OutputHoldTime

2.0—

2.5—

ns

taCe

CE

AccessTime

—8

—10

—20

ns

tdOe

OE

AccessTime

—4.5

—8

ns

thzOe(2)

OE

toHigh-ZOutput

—3

—4

—8

ns

tlzOe(2)

OE

toLow-ZOutput

0—

ns

thzCe(2

CE

toHigh-ZOutput

03

04

08

ns

tlzCe(2)

CE

toLow-ZOutput

3—

ns

tPu

PowerUpTime

0—

ns

tPd

PowerDownTime

—8

—10

—20

ns

Notes:

1. TestconditionsandoutputloadingconditionsarespecifiedintheACTestConditionsandACTestLoads(Figure1).

2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.

AC TEST LOADS

Figure 1.

319

Ω

5 pF

Including

jig and

scope

353

Ω

OUTPUT

3.3V

Figure 2.

ZO = 50

Ω

1.5V

50

Ω

OUTPUT

30 pF

Including

jig and

scope

AC TEST CONDITIONS

Parameter

Unit

(2.4V-3.6V)

InputPulseLevel

0.4VtoVdd-0.3V

InputRiseandFallTimes

1V/ns

InputandOutputTiming

Vdd/2

andReferenceLevel(VRef)

OutputLoad

SeeFigures1and2

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