Electronic Components Datasheet Search |
|
IS65WV25616DBLL-45CTLA1 Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc |
|
IS65WV25616DBLL-45CTLA1 Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc |
1 / 17 page Integrated Silicon Solution, Inc. — www.issi.com 1 Rev. D 06/19/2013 Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex- pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances IS62WV25616DALL/DBLL, IS65WV25616DBLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEATURES • High-speed access time: 35, 45, 55 ns • CMOSlowpoweroperation 30 mW (typical) operating 6µW(typical)CMOSstandby • TTLcompatibleinterfacelevels • Singlepowersupply 1.65V--2.2V Vdd (IS62WV25616DALL) 2.5V--3.6V Vdd (IS62/65WV25616DBLL) • Fullystaticoperation:noclockorrefresh required • Threestateoutputs • Datacontrolforupperandlowerbytes • IndustrialandAutomotivetemperaturesupport • Lead-freeavailable • 2CSoptionavailable DESCRIPTION The ISSIIS62WV25616DALLandIS62/65WV25616DBLL arehigh-speed,lowpower,4MbitSRAMsorganizedas 256K words by 16 bits. It is fabricated using ISSI's high- performanceCMOStechnology.Thishighlyreliableprocess coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselcted) or when CS1isLOW,CS2isHIGHandboth LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOSinputlevels. Easy memory expansion is provided by using Chip Enable andOutputEnableinputs.TheactiveLOWWriteEnable(WE) controls both writing and reading of the memory.A data byte allows Upper Byte (UB)andLowerByte(LB) access. TheIS62WV25616DALLandIS62/65WV25616DBLLare packaged in the JEDEC standard 44-PinTSOP(TYPEII) and 48-pin mini BGA (6mmx8mm). FUNCTIONAL BLOCK DIAGRAM JUNE 2013 A0-A17 CS1 CS2 OE WE 256K x 16 MEMORY ARRAY DECODER COLUMN I/O CONTROL CIRCUIT GND VDD I/O DATA CIRCUIT I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte UB LB |
Similar Part No. - IS65WV25616DBLL-45CTLA1 |
|
Similar Description - IS65WV25616DBLL-45CTLA1 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |