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MRF422 Datasheet(PDF) 1 Page - Motorola, Inc |
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MRF422 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 4 page 1 MRF422 MOTOROLA RF DEVICE DATA The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40% • Intermodulation Distortion @ 150 W (PEP) — IMD = – 30 dB (Min) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 85 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 20 Adc Withstanding Current — 10 s — 30 Adc Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 290 1.66 Watts W/ °C Storage Temperature Range Tstg – 65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 0.6 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V(BR)CEO 35 — — Vdc Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 85 — — Vdc Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 85 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C) ICES — — 20 mAdc (continued) Order this document by MRF422/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF422 150 W (PEP), 30 MHz RF POWER TRANSISTORS NPN SILICON CASE 211–11, STYLE 1 © Motorola, Inc. 1994 REV 6 |
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