1

MRF422

MOTOROLA RF DEVICE DATA

The RF Line

NPN Silicon

RF Power Transistor

Designed primarily for applications as a high–power linear amplifier from 2.0

to 30 MHz.

• Specified 28 Volt, 30 MHz Characteristics —

Output Power = 150 W (PEP)

Minimum Gain = 10 dB

Efficiency = 40%

• Intermodulation Distortion @ 150 W (PEP) —

IMD = – 30 dB (Min)

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

40

Vdc

Collector–Base Voltage

VCBO

85

Vdc

Emitter–Base Voltage

VEBO

3.0

Vdc

Collector Current — Continuous

IC

20

Adc

Withstanding Current — 10 s

—

30

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

290

1.66

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.6

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)

V(BR)CEO

35

—

—

Vdc

Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)

V(BR)CES

85

—

—

Vdc

Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0)

V(BR)CBO

85

—

—

Vdc

Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)EBO

3.0

—

—

Vdc

Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C)

ICES

—

—

20

mAdc

(continued)

Order this document

by MRF422/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF422

150 W (PEP), 30 MHz

RF POWER

TRANSISTORS

NPN SILICON

CASE 211–11, STYLE 1

REV 6