© 2007 Microchip Technology Inc.

DS22026B-page 7

MCP1725

TEMPERATURE SPECIFICATIONS

AC Performance

Output Delay From SHDN

—

100

—

µs

Output Noise

—2.0

—

µV/

√Hz I

Power Supply Ripple Rejection

Ratio

PSRR

—

60

—

dB

Thermal Shutdown Temperature

—

150

—

°C

Thermal Shutdown Hysteresis

ΔT

SD

—10

—

°C

Electrical Specifications: Unless otherwise indicated, all limits apply for V

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Operating Junction Temperature Range

-40

—

+125

°C

Steady State

Maximum Junction Temperature

—

—

+150

°C

Transient

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, 8LD 2x3 DFN

θ

JA

—

76

—

°C/W

4-Layer JC51-7

Standard Board with

vias

θ

JC

—26

—

°C/W

Thermal Resistance, 8LD SOIC

θ

JA

—

163

—

°C/W

4-Layer JC51-7

Standard Board

θ

JC

—

38.8

—

°C/W

AC/DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, V

Boldface type applies for junction temperatures, T

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note 1:

2:

3:

4:

Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is

tested over a load range from 1 mA to the maximum specified output current.

5:

Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its

6:

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained

junction temperatures above +150°C can impact device reliability.

7:

The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired junction temperature. The test time is small enough such that the rise in the junction temperature over the

ambient temperature is not significant.