FUO22-16N

0.5

1.0

1.5

2.0

0

10

20

30

0

1

1

0

20

40

60

80

100

120

1

10

100

1000

10000

0

1

2

3

050

100

150

05

10

0

4

8

12

16

20

0

50

100

150

200

0

10

20

30

T

T

0.001

0.01

0.1

1

60

70

80

90

100

110

120

130

T

Constants for Z

iR

t

1 1.359

0.1015

2 0.3286

0.1026

3 0.4651

0.4919

4 0.8473

0.62

I

F

[A]

V

I

FSM

[A]

t[s]

I

[A

[ms]

P

tot

[W]

I

T

I

F(AV)M

[A]

T

Z

thJC

[K/W]

Fig. 1 Forward current versus

voltage drop per diode

Fig. 2 Surge overload current

Fig. 3 I

Fig. 4 Power dissipation vs. direct output current & ambient temperature

Fig. 5 Max. forward current vs.

case temperature

Fig. 6 Transient thermal impedance junction to case

t[ms]

T

150°C

DC =

1

0.5

0.4

0.33

0.17

0.08

R

0.6

0.8

1

2

4

8

DC =

1

0.5

0.4

0.33

0.17

0.08

T

T

50 Hz, 80% V

RRM

Rectifier

IXYS reserves the right to change limits, conditions and dimensions.

20130215b

Data according to IEC 60747and per semiconductor unless otherwise specified

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