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HUF76407DK8T Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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HUF76407DK8T Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 12 page ©2001 Fairchild Semiconductor Corporation HUF76407DK8 Rev. B HUF76407DK8 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET® Power MOSFET Packaging Symbol Features • Ultra Low On-Resistance -rDS(ON) = 0.090Ω, VGS = 10V -rDS(ON) = 0.105Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - SPICE and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Transient Thermal Impedance Curve vs Board Mounting Area • Switching Time vs RGS Curves Ordering Information Absolute Maximum Ratings TA = 25 oC, Unless Otherwise Specified Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. JEDEC MS-012AA BRANDING DASH 1 2 3 4 5 DRAIN 1 (8) SOURCE1 (1) DRAIN 1 (7) DRAIN 2 (6) DRAIN 2 (5) SOURCE2 (3) GATE2 (4) GATE1 (2) PART NUMBER PACKAGE BRAND HUF76407DK8 MS-012AA 76407DK8 NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76407DK8T. HUF76407DK8 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 60 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 60 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±16 V Drain Current Continuous (TA = 25 oC, V GS = 5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA = 25 oC, V GS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA = 100 oC, V GS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA = 100 oC, V GS = 4.5V) (Figure 2) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 3.5 3.8 1.0 1.0 Figure 4 A A A A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 17, 18 Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 20 W mW/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC NOTES: 1. TJ = 25 oC to 125oC. 2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 1 second. 3. 228oC/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Data Sheet December 2001 |
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