SIHG22N60E_13 datasheet(2/8 Pages) VISHAY

Part #	SIHG22N60E

Description	E Series Power MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SiHG22N60E

www.vishay.com

Vishay Siliconix

S13-0509-Rev. E, 11-Mar-13

2

Document Number: 91473

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.

b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-0.55

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

600

-

V

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 250 μA

-0.71

-

V/°C

Gate-Source Threshold Voltage (N)

VGS(th)

VDS = VGS, ID = 250 μA

2

-

4

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

-

1

μA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

-

10

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 11 A

-

0.15

0.18



Forward Transconductance

gfs

VDS = 8 V, ID = 5 A

-

6.4

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 100 V,

f = 1 MHz

-

1920

-

pF

Output Capacitance

Coss

-90

-

Reverse Transfer Capacitance

Crss

-6

-

Effective Output Capacitance, Energy

Relateda

Co(er)

VDS = 0 V to 480 V, VGS = 0 V

-73

-

Effective Output Capacitance, Time

Relatedb

Co(tr)

-

263

-

Total Gate Charge

Qg

VGS = 10 V

ID = 11 A, VDS = 480 V

-57

86

nC

Gate-Source Charge

Qgs

-11

-

Gate-Drain Charge

Qgd

-24

-

Turn-On Delay Time

td(on)

VDD = 380 V, ID = 11 A,

VGS = 10 V, Rg = 4.7 

-18

36

ns

Rise Time

tr

-27

54

Turn-Off Delay Time

td(off)

-66

99

Fall Time

tf

-35

70

Gate Input Resistance

Rg

f = 1 MHz, open drain

-

0.77

-



Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

21

A

Pulsed Diode Forward Current

ISM

--

56

Diode Forward Voltage

VSD

TJ = 25 °C, IS = 11 A, VGS = 0 V

-

1.2

V

Reverse Recovery Time

trr

TJ = 25 °C, IF = IS = 11 A,

dI/dt = 100 A/μs, VR = 25 V

-

344

-

ns

Reverse Recovery Charge

Qrr

-5.3

-

μC

Reverse Recovery Current

IRRM

-28

-

A

S

D

G

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