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SIHG22N60E Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHG22N60E Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page SiHG22N60E www.vishay.com Vishay Siliconix S13-0509-Rev. E, 11-Mar-13 2 Document Number: 91473 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Case (Drain) RthJC -0.55 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 250 μA -0.71 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 1 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 10 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 11 A - 0.15 0.18 Forward Transconductance gfs VDS = 8 V, ID = 5 A - 6.4 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 1920 - pF Output Capacitance Coss -90 - Reverse Transfer Capacitance Crss -6 - Effective Output Capacitance, Energy Relateda Co(er) VDS = 0 V to 480 V, VGS = 0 V -73 - Effective Output Capacitance, Time Relatedb Co(tr) - 263 - Total Gate Charge Qg VGS = 10 V ID = 11 A, VDS = 480 V -57 86 nC Gate-Source Charge Qgs -11 - Gate-Drain Charge Qgd -24 - Turn-On Delay Time td(on) VDD = 380 V, ID = 11 A, VGS = 10 V, Rg = 4.7 -18 36 ns Rise Time tr -27 54 Turn-Off Delay Time td(off) -66 99 Fall Time tf -35 70 Gate Input Resistance Rg f = 1 MHz, open drain - 0.77 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 21 A Pulsed Diode Forward Current ISM -- 56 Diode Forward Voltage VSD TJ = 25 °C, IS = 11 A, VGS = 0 V - - 1.2 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V - 344 - ns Reverse Recovery Charge Qrr -5.3 - μC Reverse Recovery Current IRRM -28 - A S D G |
Similar Part No. - SIHG22N60E_13 |
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Similar Description - SIHG22N60E_13 |
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