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HUF76429S3S Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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HUF76429S3S Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 10 page  ©2001 Fairchild Semiconductor Corporation HUF76429P3, HUF76429S3S Rev. B Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 60 - - V ID = 250µA, VGS = 0V , TC = -40 oC (Figure 12) 55 - - V Zero Gate Voltage Drain Current IDSS VDS = 55V, VGS = 0V - - 1 µA VDS = 50V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 47A, VGS = 10V (Figures 9, 10) - 0.018 0.022 Ω ID = 31A, VGS = 5V (Figure 9) - 0.021 0.025 Ω ID = 30A, VGS = 4.5V (Figure 9) - 0.022 0.027 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-220 and TO-263 - - 1.36 oC/W Thermal Resistance Junction to Ambient RθJA -- 62 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 30V, ID = 30A VGS = 4.5V, RGS = 7.5Ω (Figures 15, 21, 22) - - 325 ns Turn-On Delay Time td(ON) -13- ns Rise Time tr - 203 - ns Turn-Off Delay Time td(OFF) -30- ns Fall Time tf -74- ns Turn-Off Time tOFF - - 155 ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 30V, ID = 47A VGS = 10V,RGS = 8.2Ω (Figures 16, 21, 22) - - 160 ns Turn-On Delay Time td(ON) -7.8 - ns Rise Time tr - 100 - ns Turn-Off Delay Time td(OFF) -51- ns Fall Time tf - 104 - ns Turn-Off Time tOFF - - 235 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 30V, ID = 31A, Ig(REF) = 1.0mA (Figures 14, 19, 20) -38 46 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 21 25 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 1.3 1.6 nC Gate to Source Gate Charge Qgs -3.8 - nC Gate to Drain "Miller" Charge Qgd -9.7 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) - 1480 - pF Output Capacitance COSS - 440 - pF Reverse Transfer Capacitance CRSS -90- pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 44A - - 1.25 V ISD = 22A - - 1.00 V Reverse Recovery Time trr ISD = 31A, dISD/dt = 100A/µs- - 98 ns Reverse Recovered Charge QRR ISD = 31A, dISD/dt = 100A/µs - - 230 nC HUF76429P3, HUF76429S3S |
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