Absolute Maximum Ratings (Ta=25ºC)

ITEMS

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

Vceo

20

V

Emitter-Collector Voltage

Veco

5

V

Collector Current

Ic

30

mA

Collector Power Dissipation

Pc

80

mW

Operating Temperature Range

Topr

-25 ~ +85

ºC

Storage Temperature Range

Tstg

-30 ~ +100

ºC

Junction Temperature

Tj

100

ºC

Lead Soldering Temperature*1

Tls

260

ºC

*1: Time 5 Sec max, Position: Up to 3mm from the body.

Peak Sensitivity Wavelength: 880nm

The MTD8000M3B-T is a photo transistor in a ceramic package. It is well suited for high reliability and high

sensitivity applications.

FEATURES

APPLICATIONS

Electrical & Optical Characteristics (Ta = 25ºC)

ITEMS

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Collector Emitter Current

Icel

1.0

--

mA

Collector Dark Current

Iceo

--

--

100

nA

C-E Saturation Voltage

VCE(sat)

--

0.2

--

V

Spectral Sensitivity

λ

--

--

400~1100

--

nm

Peak Sensitivity Wavelength

λp

--

--

880

--

nm

Switching Time (Rise Time)

Tr

RL=100Ω,

Vcc=5V, Ic=0.5mA --

10.0

--

µS

Switching Time (Fall Time)

Tf

RL=100Ω,

Vcc=5V, Ic=0.5mA --

10.0

--

µS

Angular Response

Ө

--

--

±80

--

deg

Photo Transistor

Product No:

MTD8000M3B-T

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2011-10-28