©2001 Fairchild Semiconductor Corporation

HUFA75623P3, HUFA75623S3ST Rev. B

HUFA75623P3, HUFA75623S3ST

22A, 100V, 0.064 Ohm, N-Channel,

UltraFET® Power MOSFETs

Packaging

Symbol

Features

• Ultra Low On-Resistance

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Faircild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

HUFA75623P3

JEDEC TO-220AB

JEDEC TO-263AB

HUFA75623S3ST

GATE

SOURCE

DRAIN

(FLANGE)

D

G

S

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUFA75623P3

TO-220AB

75623P

HUFA75623S3ST

TO-263AB

75623S

NOTE: When ordering, use the entire part number i.e., HUFA75623P3.

HUFA75623P3, HUFA75623S3ST

UNITS

100

V

100

V

±20

V

Drain Current

22

15

Figure 4

A

A

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Figures 6, 14, 15

85

0.57

W

-55 to 175

Maximum Temperature for Soldering

300

260

NOTE:

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet

December 2001