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BCP56-16T1G Datasheet(PDF) 1 Page - ON Semiconductor |
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BCP56-16T1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 8 1 Publication Order Number: BCP56T1/D BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • Available in 12 mm Tape and Reel Use BCP56T1 to Order the 7 inch/1000 Unit Reel Use BCP56T3 to Order the 13 inch/4000 Unit Reel • PNP Complement is BCP53T1 • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 100 Vdc Emitter−Base Voltage VEBO 5 Vdc Collector Current IC 1 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Temperature Range TJ, Tstg −65 to 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (surface mounted) RqJA 83.3 °C/W Maximum Temperature for Soldering Purposes Time in Solder Bath TL 260 10 °C Sec Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM COLLECTOR 2,4 BASE 1 EMITTER 3 MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT 1 2 3 4 http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION 1 AYW xxxxxG G xx = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) |
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