2N5686G datasheet(4/5 Pages) ONSEMI

Part #	2N5686G

Description	High-Current Complementary Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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4 / 5 page

2N5684 (PNP), 2N5686 (NPN)

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4

500

0.5

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

5.0

0.7 1.0

2.0

5.0 7.0

10

20

50

70

30

20

10

100

50

TJ = +150°C

+25

°C

-55

°C

7.0

200

300

VCE = 2.0 V

VCE = 10 V

3.0

30

PNP

2N5684

IC, COLLECTOR CURRENT (AMP)

TJ = +150°C

+25

°C

-55

°C

VCE = 2.0 V

VCE = 10 V

NPN

2N5686

Figure 9. Collector Saturation Region

2.0

0.1

IB, BASE CURRENT (AMP)

0

0.2

1.0

2.0

5.0

10

0.8

0.4

IC = 10 A

TJ = 25°C

25 A

1.2

1.6

0.5

3.0

40 A

0.1

IB, BASE CURRENT (AMP)

0.2

1.0

2.0

5.0

10

IC = 10 A

TJ = 25°C

25 A

0.5

3.0

40 A

0.3

2.5

0.5

IC, COLLECTOR CURRENT (AMP)

0.7

1.0

2.0

3.0

5.0

10

20

50

2.0

1.5

1.0

0.5

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

Figure 10. “On” Voltages

30

VBE @ VCE = 2.0 V

7.0

2.0

0.5

IC, COLLECTOR CURRENT (AMP)

0.7

1.0

2.0

3.0

5.0

10

20

50

1.6

1.2

0.8

0.4

0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

30

VBE @ VCE = 2.0 V

500

0.5

5.0

0.7 1.0

2.0

5.0 7.0

10

20

50

70

30

20

10

100

50

7.0

200

300

3.0

30

2.0

0

0.8

0.4

1.2

1.6

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