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IRFR4510PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFR4510PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  05/02/12 www.irf.com 1 HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G GD S Gate Drain Source PD - 97784 IRFR4510PbF IRFU4510PbF DPak IRFR4510PbF IPAK IRFU4510PbF Notes through are on page 11 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. S D G D S G D VDSS 100V RDS(on) typ. 11.1m max. 13.9m ID (Silicon Limited) 63A ID (Package Limited) 56A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy c mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case j ––– 1.05 RJA Junction-to-Ambient (PCB Mount) i ––– 50 RJA Junction-to-Ambient ––– 110 300 °C/W °C Max. 63 45 252 56 0.95 A 127 See Fig. 14, 15, 22a, 22b 143 -55 to + 175 ± 20 |
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