AUIRF3004WL datasheet(6/10 Pages) IRF

Part #	AUIRF3004WL

Description	HEXFETPower MOSFET

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Manufacturer	IRF [International Rectifier]

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AUIRF3004WL

6

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Fig 15. Maximum Avalanche Energy vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.

3. Equation below based on circuit and waveforms shown in Figure 22a, 22b.

4. PD (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. Iav = Allowable avalanche current.

7.

ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as

25°C in Figure 14, 15).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see Figures 13)

PD (ave) = 1/2 ( 1.3·BV·Iav) =

DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

Fig 16. Threshold Voltage vs. Temperature

25

50

75

100

125

150

175

Starting TJ , Junction Temperature (°C)

0

100

200

300

400

500

TOP

Single Pulse

BOTTOM 1.0% Duty Cycle

ID = 232A

-75 -50 -25 0

25 50 75 100 125 150 175

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

ID = 250μA

ID = 1.0mA

ID = 1.0A

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