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HUFA75831SK8T Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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HUFA75831SK8T Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 11 page ©2001 Fairchild Semiconductor Corporation HUFA75831SK8 Rev. B HUFA75831SK8 3A, 150V, 0.095 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Symbol Features • Ultra Low On-Resistance -rDS(ON) = 0.095Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve Absolute Maximum Ratings TA = 25 oC, Unless Otherwise Specified This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. BRANDING DASH 1 2 3 4 5 DRAIN (8) SOURCE (1) DRAIN (7) DRAIN (6) DRAIN (5) SOURCE (3) GATE (4) SOURCE (2) Ordering Information PART NUMBER PACKAGE BRAND HUFA75831SK8 MS-012AA 75831SK8 NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75831SK8T. HUFA75831SK8 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 150 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 150 V Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Drain Current Continuous (TA = 25 oC, V GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA = 100 oC, V GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 3 2 Figure 4 A A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15 Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5 20 W mW/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC NOTES: 1. TJ = 25 oC to 125oC. 2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second. 3. 152oC/W measured using FR-4 board with 0.054 in2 (34.8 mm2) copper pad at 1000 seconds 4. 189oC/W measured using FR-4 board with 0.0115 in2 (7.42 mm2) copper pad at 1000 seconds CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Data Sheet December 2001 |
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