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R1QPA4436RBG Datasheet(PDF) 1 Page - Renesas Technology Corp |
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R1QPA4436RBG Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 37 page PAGE : ‹#› Rev. 0.11b : 2012.06.05 Preliminary Rev. 0.11b 2012.06.05 R1QBA44**RBG / R1QEA44**RBG Series (Preliminary) Features Power Supply • 1.8 V for core (V DD), 1.4 V to VDD for I/O (VDDQ) Clock • Fast clock cycle time for high bandwidth • Two input clocks (K and /K) for precise DDR timing at clock rising edges only • Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems • Clock-stop capability with s restart I/O • Common data input/output bus • Pipelined double data rate operation • HSTL I/O • User programmable output impedance • DLL/PLL circuitry for wide output data valid window and future frequency scaling • Data valid pin (QVLD) to indicate valid data on the output Function • Two-tick burst for low DDR transaction size • Internally self-timed write control • Simple control logic for easy depth expansion • JTAG 1149.1 compatible test access port Package • 165 FBGA package (15 x 17 x 1.4 mm) Description The R1Q#A4436 is a 4,194,304-word by 36-bit and the R1Q#A4418 is a 8,388,608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package. # = B: Latency =2.5, w/o ODT # = H: Latency =2.0, w/o ODT # = E: Latency =2.5, w/ ODT # = L: Latency =2.0, w/ ODT R1QBA4436RBG / R1QBA4418RBG / R1QBA4409RBG R1QEA4436RBG / R1QEA4418RBG / R1QEA4409RBG R1QHA4436RBG / R1QHA4418RBG / R1QHA4409RBG R1QLA4436RBG / R1QLA4418RBG / R1QLA4409RBG 144-Mbit DDRII+ SRAM 2-word Burst Notes: 1. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, Samsung, and Renesas Electronics Corp. (QDR Co-Development Team) 2. The specifications of this device are subject to change without notice. Please contact your nearest Renesas Electronics Sales Office regarding specifications. 3. Refer to "http://www.renesas.com/products/memory/fast_sram/qdr_sram/index.jsp" for the latest and detailed information. 4. Descriptions about x9 parts in this datasheet are just for reference. R10DS0189EJ0011 R10DS0189EJ0011 |
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