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1N751A Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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1N751A Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 2 page Device VZ (V) ZZ ( Ω) IZT (mA) IR1 ( µA) VR (V) IR2 ( µA) VR TA=150 °C (V) TC (%/ °C) IZM* (mA) 1N746A 1N747A 1N748A 1N749A 1N750A 3.3 3.6 3.9 4.3 4.7 28 24 23 22 19 20 20 20 20 20 10 10 10 2.0 2.0 1.0 1.0 1.0 1.0 1.0 30 30 30 30 30 1.0 1.0 1.0 1.0 1.0 - 0.070 - 0.065 - 0.060 +/- 0.055 +/- 0.030 110 100 95 85 75 1N751A 1N752A 1N753A 1N754A 5.1 5.6 6.2 6.8 17 11 7.0 5.0 20 20 20 20 1.0 1.0 0.1 0.1 1.0 1.0 1.0 1.0 20 20 20 20 1.0 1.0 1.0 1.0 +/- 0.030 + 0.038 + 0.045 + 0.050 70 65 60 55 1N755A 1N756A 1N757A 1N758A 1N759A 7.5 8.2 9.1 10 12 6.0 8.0 10 17 30 20 20 20 20 20 0.1 0.1 0.1 0.1 0.1 1.0 1.0 1.0 1.0 1.0 20 20 20 20 20 1.0 1.0 1.0 1.0 1.0 + 0.058 + 0.062 + 0.068 + 0.075 + 0.077 50 45 40 35 38 1N746A - 1N759A Series Half Watt Zeners Absolute Maximum Ratings* TA = 25°C unless otherwise noted Tolerance: A = 5% Electrical Characteristics TA = 25°C unless otherwise noted @ @ @ NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. *These ratings are limiting values above which the serviceability of the diode may be impaired. *IZM (Maximum Zener Current Rating) Values shown are based on the JEDEC rating of 400 milliwatts. Where the actual zener voltage (VZ) is known at the operating point, the maximum zener current may be increased and is limited by the derating curve. Parameter Value Units Storage Temperature Range -65 to +200 °C Maximum Junction Operating Temperature + 175 °C Lead Temperature (1/16” from case for 10 seconds) + 230 °C Total Device Dissipation Derate above 25 °C 500 3.33 mW mW/ °C DO-35 Discrete POWER & Signal Technologies ã 1997 Fairchild Semiconductor Corporation |
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