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IRFS614B Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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IRFS614B Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2001 Fairchild Semiconductor Corporation November 2001 Rev. A, November 2001 IRF614B/IRFS614B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. Features • 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V • Low gate charge ( typical 8.1 nC) • Low Crss ( typical 7.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF614B IRFS614B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 2.8 2.8 * A - Continuous (TC = 100°C) 1.8 1.8 * A IDM Drain Current - Pulsed (Note 1) 8.5 8.5 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 45 mJ IAR Avalanche Current (Note 1) 2.8 A EAR Repetitive Avalanche Energy (Note 1) 4.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TC = 25°C) 40 22 W - Derate above 25°C 0.32 0.18 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter IRF614B IRFS614B Units RθJC Thermal Resistance, Junction-to-Case Max. 3.14 5.58 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W TO-220 IRF Series G S D S D G TO-220F IRFS Series G S D |
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