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Document Number: 63835

S12-2109-Rev. C, 03-Sep-12

Vishay Siliconix

SiC401A, SiC401BCD

This document is subject to change without notice.

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,

and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is

not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.

Electrical Parameter

Conditions

Limits

Unit

- 0.3 to + 20

V

- 0.4 max.

LX

- 0.3 to + 20

LX (Transient < 100 ns)

- 2 to + 20

- 0.3 to + 6

BST

to LX

- 0.3 to + 6

- 0.3 to + 25

ENL

- 0.3 to + 0.3

Temperature

Maximum Junction Temperature

150

°C

Storage Temperature

- 65 to 150

Power Dissipation

(b)

IC Section

50

°C/W

Maximum Power Dissipation

Ambient Temperature = 25 °C

3.4

W

Ambient Temperature = 100 °C

1.3

ESD Protection

HBM

2

kV

RECOMMENDED OPERATING CONDITIONS

(all voltages referenced to GND = 0 V)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Input Voltage

317

V

35.5

Output Voltage

0.6

5.5

Temperature

Ambient Temperature

- 40 to 85

°C