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PBSS4021SPN Datasheet(PDF) 2 Page - NXP Semiconductors |
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PBSS4021SPN Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 20 page PBSS4021SPN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 2 — 13 October 2010 2 of 20 NXP Semiconductors PBSS4021SPN 20 V NPN/PNP low VCEsat (BISS) transistor [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. 2. Pinning information 3. Ordering information 4. Marking TR2; PNP low VCEsat transistor VCEO collector-emitter voltage open base - - −20 V IC collector current - - −6.3 A ICM peak collector current single pulse; tp ≤ 1ms - - −15 A RCEsat collector-emitter saturation resistance IC = −5A; IB = −0.5 A [1] - 3654m Ω Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 3. Pinning Pin Description Simplified outline Graphic symbol 1emitter TR1 2 base TR1 3emitter TR2 4 base TR2 5 collector TR2 6 collector TR2 7 collector TR1 8 collector TR1 4 5 1 8 006aaa985 8765 1234 TR1 TR2 Table 4. Ordering information Type number Package Name Description Version PBSS4021SPN SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 Table 5. Marking codes Type number Marking code PBSS4021SPN 4021SPN |
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