AUIRF7303Q

08/24/11

www.irf.com

1

AUTOMOTIVE GRADE

Features

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Advanced Planar Technology

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Dual N Channel MOSFET

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Low On-Resistance

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Dynamic dV/dT Rating

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175°C Operating Temperature

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Fast Switching

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Lead-Free, RoHS Compliant

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Automotive Qualified*

Description

Specifically designed for Automotive applications, this cellular

design of HEXFET® Power MOSFETs utilizes the latest

processing techniques to achieve low on-resistance per

silicon area. This benefit combined with the fast switching

speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in Automotive

and a wide variety of other applications.

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

SO-8

AUIRF7303Q

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

*Qualification standards can be found at http://www.irf.com/

30V

5.3A

Parameter

Max.

Units

5.3

4.4

Pulsed Drain Current c

44

Power Dissipation

2.4

W

Linear Derating Factor

0.02

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

d

414

Single Pulse Avalanche Energy

g

1160

dv/dt

Peak Diode Recovery dv/dt

e

1.6

V/ns

Operating Junction and

Storage Temperature Range

Thermal Resistance

Parameter

Max.

Units

Junction-to-Ambient h

62.5

°C/W

A

°C

-55 to + 175

mJ

PD - 97654C