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AUIRF7303QTR Datasheet(PDF) 1 Page - International Rectifier |
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AUIRF7303QTR Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page HEXFET® Power MOSFET AUIRF7303Q 08/24/11 www.irf.com 1 AUTOMOTIVE GRADE Features l Advanced Planar Technology l Dual N Channel MOSFET l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Lead-Free, RoHS Compliant l Automotive Qualified* Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 SO-8 AUIRF7303Q Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ V(BR)DSS 30V RDS(on) max. 0.05Ω ID 5.3A Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.4 IDM Pulsed Drain Current c 44 PD @TA = 25°C Power Dissipation 2.4 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy d 414 EAS(Tested) Single Pulse Avalanche Energy g 1160 dv/dt Peak Diode Recovery dv/dt e 1.6 V/ns TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Max. Units RθJA Junction-to-Ambient h 62.5 °C/W A °C -55 to + 175 mJ PD - 97654C |
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