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DPG30C300PC Datasheet(PDF) 1 Page - IXYS Corporation

Part # DPG30C300PC
Description  High Performance Fast Recovery Diode
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

DPG30C300PC Datasheet(HTML) 1 Page - IXYS Corporation

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DPG 30 C 200 HB
advanced
ns
HiPerFRED
Symbol
Definition
R a t i n g s
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
typ.
max.
I
FSM
I
R
A
V
150
IFAV
A
V
F
1.25
RthJC
1.70 K/W
V
R =
1
2
3
min.
15
t = 10 ms
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
VRRM
V
200
1
T
VJ
V°C
=
T
VJ
°C
=mA
0.08
Package:
Part number
V
R =
T
VJ =°C
I
F
=A
V
TC = 140°C
rectangular, d = 0.5
P
tot
90
W
TC
°C
=
T
VJ
175
°C
-55
V
I
RRM
FAV
=
=
200
15
15
T
VJ =45°C
DPG 30 C 200 HB
V
A
200
V
200
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
1.50
TVJ
°C
=25
C
J
tbd
pF
junction capacitance
V=
V;
100
T
150
V
F0
V
0.69
T
VJ = 175°C
rF
17.3
Ω
f = 1 MHz
=
°C
25
m
V
1.00
TVJ =°C
IF =A
V
15
150
1.27
I
F
=A
30
IF =A
30
2x
threshold voltage
slope resistance
for power loss calculation only
Backside: cathode
3A
T
VJ =°C
reverse recovery time
A
tbd
35
tbd
ns
(50 Hz), sine
t
rr
=
35 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
TO-247
rIndustry standard outline
rEpoxy meets UL 94V-0
rRoHS compliant
R
VJ
I
RM
max. reverse recovery current
IF =A;
20
25
T=
°C
VJ
-diF
=A/µs
200
/dt
t
rr
VR =
V
100
TVJ =°C
25
T=
°C
VJ
µA
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
0629
Data according to IEC 60747and per diode unless otherwise specified


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