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BZT03C12 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BZT03C12 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BZT03-Series www.vishay.com Vishay Semiconductors Rev. 1.7, 11-Sep-12 1 Document Number: 85599 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Zener Diodes with Surge Current Specification FEATURES • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Medium power voltage regulators and medium power transient suppression circuits PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 6.2 to 300 V Test current IZT 2 to 100 mA VZ specification Pulse current Int. construction Single 949539 ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BZT03C6V2 BZT03C6V2-TR 5000 per 10" tape and reel 25 000 BZT03C6V2 BZT03C6V2-TAP 5000 per ammopack 25 000 PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS SOD-57 369 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation I = 10 mm, TL = 25 °C Ptot 3250 mW Tamb = 25 °C Ptot 1300 Repetitive peak reverse power dissipation PZRM 10 W Non repetitive peak surge power dissipation tp = 100 μs, Tj = 25 °C PZSM 600 W Junction to ambient air I = 10 mm, TL = constant RthJA 46 K/W On PC board with spacing 25 mm RthJA 100 Junction temperature Tj 175 °C Storage temperature range TS - 65 to + 175 °C Forward voltage (max.) IF = 0.5 A VF 1.2 V |
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