PG-TO220-3 datasheet(4/17 Pages) INFINEON

Part #	PG-TO220-3

Description	650V DuoPack IGBT and Diode High speed switching series fifth generation

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Manufacturer	INFINEON [Infineon Technologies AG]

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4 / 17 page

4

IKP08N65F5

Highspeedswitchingseriesfifthgeneration

Rev.1.1,2012-11-09

Maximumratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

650

V

DCcollectorcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

IC

18.0

11.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax

ICpuls

24.0

A

TurnoffsafeoperatingareaVCE

≤650V,Tvj≤175°C

-

24.0

A

Diodeforwardcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

IF

20.0

12.0

A

Diodepulsedcurrent,tplimitedbyTvjmax

IFpuls

24.0

A

Gate-emitter voltage

TransientGate-emittervoltage(tp

≤10µs,D<0.010)

VGE

±20

±30

V

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Ptot

70.0

31.0

W

Operating junction temperature

Tvj

-40...+175

°C

Storage temperature

Tstg

-55...+150

°C

Soldering temperature,

wave soldering 1.6 mm (0.063 in.) from case for 10s

260

°C

Mounting torque, M3 screw

Maximum of mounting processes: 3

M

0.6

Nm

ThermalResistance

Parameter

Symbol Conditions

Max.Value

Unit

Characteristic

IGBT thermal resistance,

junction - case

Rth(j-c)

2.20

K/W

Diode thermal resistance,

junction - case

Rth(j-c)

2.90

K/W

Thermal resistance

junction - ambient

Rth(j-a)

62

K/W

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PG-TO220-3 Datasheet(PDF) 4 Page - Infineon Technologies AG

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