SiP32460, SiP32461, SiP32462

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Vishay Siliconix

S13-1347-Rev. C, 03-Jun-13

2

Document Number: 67754

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

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Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

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ABSOLUTE MAXIMUM RATINGS

PARAMETER

CONDITIONS

LIMIT

UNIT

Reference to GND

- 0.3 to 6.5

V

Reference to GND

- 0.3 to 6.5

- 1.6

Enable Input Voltage EN

Reference to GND

- 0.3 to 6.5

Maximum Continuous Switch Current

1.2

A

Maximum Pulse Switch Current

Pulse at 1 ms, 10 % duty cycle

2

ESD Rating (HBM)

4000

V

Thermal Resistance

280

°C/W

TEMPERATURE

Operating Temperature

- 40 to 85

°C

Operating Junction Temperature

125

Storage Temperature

- 65 to 150

RECOMMENDED OPERATING RANGE

ELECTRICAL PARAMETER

MINIMUM

TYPICAL

MAXIMUM

UNIT

1.2

-

5.5

V

SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITION UNLESS SPECIFIED

(Typical values are at 25 °C)

LIMITS

UNIT

MIN.

TYP.

MAX.

POWER SUPPLY

Quiescent Current

-

4.5

7

μA

Shutdown Current

OUT = GND

-

0.01

2

Off Switch Current

EN = GND, OUT = GND

-

0.01

2

Reverse Blocking Current

Out = 5 V, IN = 1.2 V, EN = 0 V, (Measured at IN pin)

-

0.01

1

Out = 5 V, IN = 0 V, EN = 0 V, (Measured at IN pin)

-

0.01

1

SWITCH RESISTANCE

On Resistance

-

95

150

m



-

80

120

-

70

100

-

54

65

-

52

65

Discharge Switch On

Resistance

-

80

-



-

< 200

-

EN Pin Pull Down Resistor

EN = 1.2 V

1

2.6

5

M



On Resistance Temperature

Coefficient

-

2800

ppm/°C

ON/OFF LOGIC

EN Input Low Voltage

0.4

-

-

V

EN Input High Voltage

-

-

1