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AUIRF7309Q Datasheet(PDF) 2 Page - International Rectifier |
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AUIRF7309Q Datasheet(HTML) 2 Page - International Rectifier |
2 / 14 page AUIRF7309Q 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Pulse width ≤ 300µs; duty cycle ≤ 2%. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units N-Ch 30 ––– ––– V P-Ch -30 ––– ––– N-Ch ––– 0.032 ––– V/°C P-Ch ––– -0.037 ––– ––– ––– 0.050 ––– ––– 0.080 ––– ––– 0.10 ––– ––– 0.16 N-Ch 1.0 ––– 3.0 V P-Ch -1.0 ––– -3.0 N-Ch 5.2 ––– ––– S P-Ch 2.5 ––– ––– N-Ch ––– ––– 1.0 P-Ch ––– ––– -1.0 N-Ch ––– ––– 25 P-Ch ––– ––– -25 IGSS Gate-to-Source Forward Leakage N-P ––– ––– -100 Gate-to-Source Reverse Leakage N-P ––– ––– 100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units N-Ch ––– ––– 25 P-Ch ––– ––– 25 N-Ch ––– ––– 2.9 e P-Ch ––– ––– 2.9 N-Ch ––– ––– 7.9 N-Ch ––– ––– 9.0 P-Ch ––– 6.8 ––– N-Ch ––– 11 ––– P-Ch ––– 21 ––– N-Ch ––– 17 ––– N-Ch ––– 22 ––– P-Ch ––– 25 ––– N-Ch ––– 7.7 ––– P-Ch –––18––– LD Internal Drain Inductance N-P ––– 4.0 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance N-P ––– 6.0 ––– from package and center of die contact N-Ch ––– 520 ––– P-Ch ––– 440 ––– VGS = 0V, VDS = 15V, ƒ = 1.0MHz N-Ch ––– 180 ––– e P-Ch ––– 200 ––– N-Ch ––– 72 ––– VGS = 0V, VDS = -15V, ƒ = 1.0MHz P-Ch –––93––– Diode Characteristics Parameter Min. Typ. Max. Units N-Ch ––– ––– 1.0 V P-Ch ––– ––– -1.0 N-Ch ––– 47 71 ns N-Channel P-Ch ––– 53 80 TJ = 25°C,IF =2.6A, di/dt = 100A/μs N-Ch ––– 56 84 nC P-Channel e P-Ch ––– 66 99 TJ = 25°C,IF =-2.2A, di/dt = 100A/μs ton Forward Turn-On Time N-P Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) TJ = 25°C, IS = -1.8A, VGS = 0V e trr Reverse Recovery Time Qrr Reverse Recovery Charge ––– ––– -12 VSD Diode Forward Voltage ISM Pulsed Source Current (Body Diode) c P-Ch N-Ch 16 N-Ch P-Ch -1.8 ––– ––– IS Continuous Source Current (Body Diode) RD = 4.5 Ω N-Channel ––– ––– Crss Reverse Transfer Capacitance P-Channel Ciss ––– ––– 1.8 nA A pF ns nC μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = -20V TJ = 25°C, IS = 1.8A, VGS = 0V e Conditions Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 2.4A e Ω VGS = -10V, ID = 1.8A e P-Ch VGS = 4.5V, ID = 2.0A e VGS = -4.5V, ID = 1.5A e Conditions VDS = 15V, ID = 2.4A N-Channel VGS = 20V VDS = VGS, ID = 250μA V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS = 0V, ID =-250μA Reference to 25°C, ID = -1mA N-Ch VGS(th) Gate Threshold Voltage Forward Transconductance gfs IDSS Drain-to-Source Leakage Current Qg Total Gate Charge VDS = VGS, ID = -250μA VDS = -24V, ID = -1.8A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time P-Channel td(off) Turn-Off Delay Time tf Fall Time Input Capacitance Coss Output Capacitance ID = 2.6A, VDS = 16V, VGS = 4.5V P-Channel VDD= 10V, ID = 2.6A RG = 6.0 Ω VDD=-10V, ID =-2.2A RG = 6.0Ω ID =-2.2A, VDS =-16V, VGS =-4.5V N-Channel RD = 3.8 Ω |
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