1

www.irf.com

© 2013 International Rectifier

May 06, 2013

G

D

S

Gate

Drain

Source

Features



 Advanced Process Technology



 New Ultra Low On-Resistance



175°C Operating Temperature

Fast Switching



 Repetitive Avalanche Allowed up to Tjmax



 Lead-Free, RoHS Compliant



 Automotive Qualified *

Description

MOSFETs utilizes the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined with the fast switching

speed and ruggedized device design that HEXFET power MOSFETs are

well known for, provides the designer with an extremely efficient and reliable

device for use in Automotive and a wide variety of other applications

.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-

tions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Base part number Package Type

Standard Pack

Complete Part Number

Form

Quantity

AIRFR8401

Tube

75

AUIRFR8401

Tape and Reel

2000

AUIRFR8401TR

AUIRFU8401

I-Pak

Tube

75

AUIRFU8401

Ordering Information

Tape and Reel Left

3000

AUIRFR8401TRL

Tape and Reel Right

3000

AUIRFR8401TRR

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

AUTOMOTIVE GRADE

D-Pak

AUIRFR8401

I-Pak

AUIRFU8401

D

S

G

40V

3.2m



max

4.25m



100A

100A

 

Applications

Electric Power Steering (EPS)

 Battery Switch

 Start /Stop Micro Hybrid

 Heavy Loads

DC-DC Converter

Parameter

Max.

Units

100

A

71

100

Pulsed Drain Current 

400

Maximum Power Dissipation 

79

W

Linear Derating Factor 

0.53

W/°C

Gate-to-Source Voltage

± 20

V

Operating Junction and

-55 to + 175

°C  

Storage Temperature Range

AUIRFR8401

AUIRFU8401