©2001 Fairchild Semiconductor Corporation

November 2001

Rev. B, November 2001

IRFW720B / IRFI720B

400V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies and

electronic lamp ballasts based on half bridge.

Features

• Low gate charge ( typical 14 nC)

• Low Crss ( typical 11 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Thermal Characteristics

Symbol

Parameter

IRFW720B / IRFI720B

Units

Drain-Source Voltage

400

V

Drain Current

3.3

A

2.1

A

Drain Current

- Pulsed

(Note 1)

13.2

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

240

mJ

Avalanche Current

(Note 1)

3.3

A

Repetitive Avalanche Energy

(Note 1)

4.9

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

5.5

V/ns

3.13

W

49

W

- Derate above 25°C

0.39

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

2.57

°C/W

Thermal Resistance, Junction-to-Ambient *

--

40

°C/W

Thermal Resistance, Junction-to-Ambient

--

62.5

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

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S

D

G

IRFW Series

IRFI Series

GS

D

GS

D