IR3865MPBF

6

8/8/2012 Rev3.1

PARAMETER

NOTE

TEST CONDITION

MIN

TYP

MAX

UNIT

GATE DRIVE

Deadtime

1

Monitor body diode conduction

on PHASE pin

5

30

ns

BOOTSTRAP PFET

Forward Voltage

I(BOOT) = 10mA

300

mV

UPPER MOSFET

Static Drain-to-Source On-

Resistance

VCC = 5V, I

23

28

m

Ω

LOWER MOSFET

Static Drain-to-Source On-

Resistance

VCC = 5V, I

10.7

13

m

Ω

FAULT PROTECTION

ISET Pin Output Current

17

19

21

µA

ISET Pin Output Current

Temperature Coefficient

1

4400

ppm/

Under Voltage Threshold

Falling V

0.37

0.4

0.43

V

Under Voltage Hysteresis

1

Rising V

FB

7.5

mV

Over Voltage Threshold

Rising V

0.586 0.625

0.655

V

Over Voltage Hysteresis

1

Falling V

FB

7.5

mV

VCC Turn-on Threshold

3.9

4.2

4.5

V

VCC Turn-off Threshold

3.6

3.9

4.2

V

VCC Threshold Hysteresis

300

mV

EN Rising Threshold

1.1

1.25

1.45

V

EN Hysteresis

400

mV

EN Input Current

EN = 3.3V

15

µA

PGOOD Pull Down

Resistance

25

50

Ω

PGOOD Delay Threshold

(V

1

V

Thermal Shutdown

Threshold

1

125

140

Thermal Shutdown

Threshold Hysteresis

1

20

Note 1: Guaranteed by design, not tested in production

Note 2: Upgrade to industrial/MSL2 level applies from date codes 1227(marking explained on

application note AN1132 page 2). Products with prior date code of 1227 are qualified with MSL3

for Consumer Market.

Electrical Specifications (continued)

C ≤ T