6

IR3863MPBF

8/8/2012 Rev3.2

Electrical Specifications (continued)

C ≤ T

PARAMETER

NOTE

TEST CONDITION

MIN

TYP

MAX

UNIT

GATE DRIVE

Deadtime

1

Monitor body diode conduction

on PHASE pin

5

30

ns

BOOTSTRAP PFET

Forward Voltage

I(BOOT) = 10mA

300

mV

UPPER MOSFET

Static Drain-to-Source On-

Resistance

VCC = 5V, I

21.1

26

m

Ω

LOWER MOSFET

Static Drain-to-Source On-

Resistance

VCC = 5V, I

20.1

25

m

Ω

FAULT PROTECTION

ISET Pin Output Current

17

19

21

µA

ISET Pin Output Current

Temperature Coefficient

1

4400

ppm/

Under Voltage Threshold

Falling V

0.37

0.4

0.43

V

Under Voltage Hysteresis

1

Rising V

FB

7.5

mV

Over Voltage Threshold

Rising V

0.586 0.625

0.655

V

Over Voltage Hysteresis

1

Falling V

FB

7.5

mV

VCC Turn-on Threshold

3.9

4.2

4.5

V

VCC Turn-off Threshold

3.6

3.9

4.2

V

VCC Threshold Hysteresis

300

mV

EN Rising Threshold

1.1

1.25

1.45

V

EN Hysteresis

400

mV

EN Input Current

EN = 3.3V

15

µA

PGOOD Pull Down

Resistance

25

50

Ω

PGOOD Delay Threshold

(V

1

V

Thermal Shutdown

Threshold

1

125

140

Thermal Shutdown

Threshold Hysteresis

1

20

Note 1: Guaranteed by design, not tested in production

Note 2: Upgrade to industrial/MSL2 level applies from date codes 1227 (marking explained on

application note AN1132 page 2). Products with prior date code of 1227 are qualified with MSL3

for Consumer Market.