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DMG6602SVT-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMG6602SVT-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 10 page DMG6602SVT Document number: DS35106 Rev. 6 - 2 2 of 10 www.diodes.com May 2012 © Diodes Incorporated DMG6602SVT Maximum Ratings – Q1 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = 25°C TA = 70°C ID 3.4 2.7 A Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = 25°C TA = 70°C ID 2.7 2.2 A Maximum Continuous Body Diode Forward Current (Note 5) IS 1.5 A Pulsed Drain Current (Note 5) IDM 25 A Maximum Ratings – Q2 @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = -10V Steady State TA = 25°C TA = 70°C ID -2.8 -2.4 A Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = 25°C TA = 70°C ID -2.3 -2.1 A Maximum Continuous Body Diode Forward Current (Note 5) IS -1.5 A Pulsed Drain Current (Note 5) ID -20 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 4) TA = 25°C PD 0.84 W TA = 70°C 0.52 Thermal Resistance, Junction to Ambient (Note 4) Steady state RθJA 155 °C/W t<10s 109 Total Power Dissipation (Note 5) TA = 25°C PD 1.27 W TA = 70°C 0.8 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 102 °C/W t<10s 71 Thermal Resistance, Junction to Case (Note 5) RθJC 34 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. |
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