DMG6602SVT

Document number: DS35106 Rev. 6 - 2

2 of 10

www.diodes.com

May 2012

© Diodes Incorporated

DMG6602SVT

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Steady

State

3.4

2.7

A

Steady

State

2.7

2.2

A

Maximum Continuous Body Diode Forward Current (Note 5)

1.5

A

Pulsed Drain Current (Note 5)

25

A

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Steady

State

-2.8

-2.4

A

Steady

State

-2.3

-2.1

A

Maximum Continuous Body Diode Forward Current (Note 5)

-1.5

A

Pulsed Drain Current (Note 5)

-20

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 4)

0.84

W

0.52

Thermal Resistance, Junction to Ambient (Note 4)

Steady state

155

°C/W

t<10s

109

Total Power Dissipation (Note 5)

1.27

W

0.8

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

102

°C/W

t<10s

71

Thermal Resistance, Junction to Case (Note 5)

34

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.