DMP2018LFK

Document number: DS35357 Rev. 5 - 2

3 of 7

www.diodes.com

March 2012

© Diodes Incorporated

DMP2018LFK

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-20

-

-

V

-

-

-1

μA

Gate-Source Leakage

-

-

±2

μA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.45

-

-1.2

V

Static Drain-Source On-Resistance

-

10

16

mΩ

-

12

20

-

13.6

25

-

20

-

Forward Transfer Admittance

10

17

-

S

Diode Forward Voltage

-

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

4748

-

pF

f = 1.0MHz

Output Capacitance

-

833

-

Reverse Transfer Capacitance

-

339

-

Gate Resistance

-

6.2

-

Ω

-

113

-

nC

-

53

-

Gate-Source Charge

-

7.1

-

Gate-Drain Charge

-

8.5

-

Turn-On Delay Time

-

22.8

-

ns

Turn-On Rise Time

-

29.8

-

Turn-Off Delay Time

-

240.8

-

Turn-Off Fall Time

-

100.6

-

Notes:

6. UIS in production with L = 0.5mH, TJ = 25°C

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

0

0.511.5

2

Fig. 1 Typical Output Characteristic

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

5

10

15

20

25

30

V

= -1.5V

GS

V

= -2.0V

GS

V

= -2.5V

GS

V

= -4.5V

GS

V

= -10V

GS

0

0.5

1

1.5

2

2.5

3

Fig. 2 Typical Transfer Characteristic

-V

, GATE-SOURCE VOLTAGE (V)

GS

0

5

10

15

20

25

30

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= -5V

DS