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D5V0L6B5LP37B Datasheet(PDF) 2 Page - Diodes Incorporated |
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D5V0L6B5LP37B Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 4 page D5V0L1B2WS Document number: DS35429 Rev. 4 - 2 2 of 4 www.diodes.com January 2012 © Diodes Incorporated D5V0L1B2WS Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation PPP 84 W 8/20 μs, Per Fig. 1 Peak Pulse Current IPP 6 A 8/20 μs, Per Fig. 1 ESD Protection – Contact Discharge VESD_Contact ±30 kV Standard IEC 61000-4-2 ESD Protection – Air Discharge VESD_Air ±30 kV Standard IEC 61000-4-2 Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 4) PD 200 mW Thermal Resistance, Junction to Ambient (Note 4) RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage VRWM - - 5 V - Channel Leakage Current (Note 5) IRM - 10 100 nA VRWM = 5V Clamping Voltage, Positive Transients VCL - - - - 7.0 8.7 10.5 11.5 9.0 10.7 12.0 14.0 V IPP = 1A, tp = 8/20μS IPP = 3A, tp = 8/20μS IPP = 5A, tp = 8/20μS IPP = 6A, tp = 8/20μS Breakdown Voltage VBR 6 7 8 V IR = 1mA Differential Resistance RDIF - 0.2 - Ω IR = 1A, tp = 8/20μS Channel Input Capacitance CT - 15 20 pF VR = 0V, f = 1MHz Notes: 4. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com. 5. Short duration pulse test used to minimize self-heating effect. 0 t, TIME ( s) Fig. 1 Pulse Waveform μ 20 40 60 100 50 0 10 11 12 13 14 15 16 17 18 01 2 3 4 5 6 V , REVERSE VOLTAGE (V) Fig. 2 Typical Total Capacitance vs. Reverse Voltage R f = 1MHz |
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