4

www.irf.com

IRFHM792TRPbF/IRFHM792TR2PbF

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)

Fig 8. Maximum Safe Operating Area

Fig 9. Maximum Drain Current vs.

Case (Bottom) Temperature

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 10. Threshold Voltage vs. Temperature

0.2

0.4

0.6

0.8

1.0

1.2

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

TJ = 25°C

TJ = 150°C

VGS = 0V

25

50

75

100

125

150

TC , Case Temperature (°C)

0

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

3.6

4

4.4

4.8

5.2

Limited By Wirebond

-75 -50 -25

0

25

50

75 100 125 150

TJ , Temperature ( °C )

1.5

2.0

2.5

3.0

3.5

4.0

ID = 10μA

ID = 25μA

ID = 250μA

ID = 1.0mA

1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

0.01

0.1

1

10

100

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.10

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

OPERATION IN THIS AREA LIMITED BY RDS(on)

Tc = 25°C

Tj = 150°C

Single Pulse

100μsec

1msec

10msec

DC

Limited by

Wirebond