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UPA2690T1R Datasheet(PDF) 9 Page - Renesas Technology Corp

Part # UPA2690T1R
Description  COMPLEMENTARY MOSFET Low on-state resistance
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPA2690T1R Datasheet(HTML) 9 Page - Renesas Technology Corp

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μPA2690T1R
R07DS1000EJ0101 Rev.1.01
Page 9 of 10
Mar 04, 2013
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
0
20
40
60
80
100
120
140
160
-50
0
50
100
150
Pulsed
ID =
–1.5A
VGS =
–1.8V
–4.5V
–2.5V
Tch - Channel Temperature - °C
10
100
1000
-0.1
-1
-10
-100
VGS = 0V
f = 1.0MHz
Crss
Ciss
Coss
VDS – Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1
10
100
0.1
1
10
100
td(on)
tr
td(off)
tf
VDD =
–10V
VGS =
–4.0V
RG = 6Ω
ID - Drain Current - A
-0
-1
-2
-3
-4
-5
-0
-5
-10
-15
-20
-25
01
234
56
VDD=
–16V
–10V
–4V
ID =
–3.0A
VGS
VDS
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.01
0.1
1
10
100
00.5
11.5
Pulsed
VGS =0V
VF(S–D) - Drain to Source Voltage - V


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