©2002 Fairchild Semiconductor Corporation

ISL9N2357D3ST Rev. B1

ISL9N2357D3ST

30V, 0.007 Ohm, 35A, N-Channel

MOSFET technology that achieves the lowest possible on-

resistance per silicon area while maintaining fast switching

and low gate charge. The reduced conduction and switching

losses extend battery life in notebook PCs, cellular

telephones and other portable information appliances and

improve the overall efficiency of high frequency DC-DC

converters used to power the latest microprocessors.

Packaging

ISL9N2357D3ST

JEDEC TO-252AA

Features

Symbol

GATE

SOURCE

DRAIN (FLANGE)

Ordering Information

PART NUMBER

PACKAGE

BRAND

ISL9N2357D3ST

TO-252AA

N2357D

NOTE: When ordering, use the entire part number.

e.g., ISL9N2357D3ST.

D

G

S

Absolute Maximum Ratings

SYMBOL

PARAMETER

ISL9N2357D3ST

UNITS

Drain to Source Voltage (Note 1)

30

V

30

V

Gate to Source Voltage

±20

V

Drain Current

Pulsed Drain Current

35

35

Figure 4

A

A

A

Power Dissipation

100

0.67

W

Operating and Storage Temperature

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

300

260

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case, TO-252

1.5

Thermal Resistance Junction to Ambient TO-252

100

NOTE:

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet

June 2002