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CHA6517 Datasheet(PDF) 2 Page - United Monolithic Semiconductors |
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CHA6517 Datasheet(HTML) 2 Page - United Monolithic Semiconductors |
2 / 10 page CHA6517 6-18GHz High Power Amplifier Ref. DSCHA65179250 - 07 Sept 09 2/10 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics (one channel) Tamb=25°C (2), Vd=8V, Id (Quiescient)=0.6A, Pulsed biasing mode Symbol Parameter Min Typ Max Unit F_op Operating frequency 6 18 GHz G_lin Linear gain (Pin=-5dBm) 19 22 dB RL_in Input Return Loss -14 -8 dB RL_out Output Return Loss -8 -4 dB Psat Saturated output power (Pin=11dBm) 30 32 dBm PAE_sat Power Added Efficiency in saturation 15 % Vd Positive supply voltage 8 V Id Power supply quiescent current (1) 0.6 A Vg Negative supply voltage -0.4 V Top Operating temperature range (2) -40 +70 °C (1) This parameter is fixed by gate voltage Vg (2) The reference is the back-side of the chip Absolute Maximum Ratings (1) Symbol Parameter Values Unit Pin (2) Maximum Input power 19 dBm Vd (2) Positive supply voltage without RF power 8.5 V Id (2) Positive supply quiescent current 1 A Pd (2) Power dissipation 13.5 W Tj Junction temperature 175 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) These values are specified for Tamb=25°C |
Similar Part No. - CHA6517_09 |
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Similar Description - CHA6517_09 |
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